dual switching diode common cathode maximum ratings (each diode) rating symbol value unit reverse voltage v r 100 vdc recurrent peak forward current i f 200 madc peak forward surge current (pulse width = 10 m sec) i fm(surge) 500 madc power dissipation @ t a = 25 c derate above 25 c p d (1) 625 5.0 mw mw/ c operating and storage junction temperature range t j , t stg (1) 55 to +135 c electrical characteristics (t a = 25 c unless otherwise noted) (each diode) characteristic symbol min max unit breakdown voltage (i (br) = 100 m adc) v (br) 100 e vdc reverse current (v r = 100 vdc) (v r = 50 vdc) (v r = 50 vdc, t a = 125 c) i r e e e 5.0 0.1 50 m adc forward voltage (i f = 1.0 madc) (i f = 10 madc) (i f = 100 madc) v f 0.55 0.67 0.75 0.7 0.82 1.1 vdc capacitance (v r = 0) c e 1.5 pf reverse recovery time (i f = i r = 10 madc, v r = 5.0 vdc, i rr = 1.0 madc) t rr e 4.0 ns 1. continuous package improvements have enhanced these guaranteed maximum ratings as follows: p d = 1.0 w @ t c = 25 c, derate above 25 c ? 8.0 mw/ c, t j = 65 to +150 c, q jc = 125 c/w. on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 1 952 publication order number: msd6100/d msd6100 case 2911, style 3 to92 (to226aa) 1 2 3 3 cathode anode 1 2 anode
msd6100 http://onsemi.com 953 typical characteristics 100 0.2 0.4 v f , forward voltage (volts) 0.6 0.8 1.0 1.2 10 1.0 0.1 t a = 85 c 10 0 v r , reverse voltage (volts) 1.0 0.1 0.01 0.001 10 20 30 40 50 1.0 0 v r , reverse voltage (volts) 0.9 0.8 0.7 0.6 c d , diode capacitance (pf) 2468 i f , forward current (ma) figure 1. forward voltage figure 2. leakage current figure 3. capacitance t a = -40 c t a = 25 c t a = 150 c t a = 125 c t a = 85 c t a = 55 c t a = 25 c i r , reverse current ( m a) curves applicable to each anode
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